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Title: CdS roughness by Anti-Stokes Raman spectroscopy
Author: Molina-Contreras, J.R.
Medina-Gutierrez, C.
Frausto-Reyes, C.
Calixto, S.
Issue Date: 2006
Abstract: A Raman system, with the 514.5 and 632.8 nm excitations wavelengths, was used to qualitatively detect the surface roughness of a CdS wafer sample. Anti-Stokes Raman spectra were obtained from several sample zones with different mean roughness levels, previously measured with Atomic Force Microscopy. Our results show that there is a spectrum profile which can be related to the sample roughness, which shows a better definition with the 514.5 nm excitation wavelength. copyright The Electrochemical Society.
Appears in Collections:Producción científica UdeG (prueba)

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