Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.12104/65753
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dc.contributor.authorAndrade, E.
dc.contributor.authorBlanco, O.
dc.contributor.authorde Lucio, O.G.
dc.contributor.authorSolis, C.
dc.contributor.authorRocha, M.F.
dc.contributor.authorZavala, E.P.
dc.date.accessioned2015-11-19T18:50:40Z-
dc.date.available2015-11-19T18:50:40Z-
dc.date.issued2010
dc.identifier.urihttp://hdl.handle.net/20.500.12104/65753-
dc.description.abstractEpitaxial thin films of Pb(Zr0.53Ti0.47) (PZT) ferroelectric ceramic were successfully grown on Sr(Nb)TiO3 (SNTO) single crystal substrates by an high-pressure RF sputtering technique. Pure O2 was used as working gas at a pressure above 1 Torr. The crystalline films properties were evaluated by θ-2θ DRX scans. From these measurements we concluded that the PZT layers were single crystalline and c-axis oriented with a (001)PZT
dc.description.abstract(001)SNTO crystallographic relationship. Film composition and film-substrate interface characteristics were studied by bombardment of the samples with a 2560 keV 3He+ beam. Rutherford Backscattering (RBS) technique was applied to fit the experimental spectra in order to deduce the elemental depth concentration profile of the films. The high-pressured technique represents a useful and capable method to obtaining in situ epitaxial ferroelectric thin film with high quality structural, compositional and dielectric properties, without post deposit treatment. © 2010 Elsevier B.V. All rights reserved.
dc.titleIon beam analysis of high pressure deposition of epitaxial PZT thin films
dc.typeArticle
dc.identifier.doi10.1016/j.nimb.2010.02.109
dc.relation.ispartofjournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
dc.relation.ispartofvolume268
dc.relation.ispartofissue11-dic.
dc.relation.ispartofpage1964
dc.relation.ispartofpage1966
dc.subject.keywordCrystalline properties; High-pressure sputtering; PZT thin films; RBS
dc.contributor.affiliationAndrade, E., Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, 01000, Mexico; Blanco, O., CUCEI, Universidad de Guadalajara, Guadalajara, Jal. 44430, Mexico; de Lucio, O.G., Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, 01000, Mexico; Solis, C., Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, 01000, Mexico; Rocha, M.F., ESIME-Z, Instituto Politécnico Nacional, U.P. A.L.M., México D.F. 07738, Mexico; Zavala, E.P., Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, 01000, Mexico
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dc.identifier.urlhttp://www.scopus.com/inward/record.url?eid=2-s2.0-77953324190&partnerID=40&md5=60d32606c957585ac39e0c847ce0cd86
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