Por favor, use este identificador para citar o enlazar este ítem: https://hdl.handle.net/20.500.12104/65753
Título: Ion beam analysis of high pressure deposition of epitaxial PZT thin films
Autor: Andrade, E.
Blanco, O.
de Lucio, O.G.
Solis, C.
Rocha, M.F.
Zavala, E.P.
Fecha de publicación: 2010
Resumen: Epitaxial thin films of Pb(Zr0.53Ti0.47) (PZT) ferroelectric ceramic were successfully grown on Sr(Nb)TiO3 (SNTO) single crystal substrates by an high-pressure RF sputtering technique. Pure O2 was used as working gas at a pressure above 1 Torr. The crystalline films properties were evaluated by θ-2θ DRX scans. From these measurements we concluded that the PZT layers were single crystalline and c-axis oriented with a (001)PZT
(001)SNTO crystallographic relationship. Film composition and film-substrate interface characteristics were studied by bombardment of the samples with a 2560 keV 3He+ beam. Rutherford Backscattering (RBS) technique was applied to fit the experimental spectra in order to deduce the elemental depth concentration profile of the films. The high-pressured technique represents a useful and capable method to obtaining in situ epitaxial ferroelectric thin film with high quality structural, compositional and dielectric properties, without post deposit treatment. © 2010 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/20.500.12104/65753
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