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|Title:||Physical properties of CdTe:Cu films grown at low temperature by pulsed laser deposition|
|Author:||De Moure-Flores, F.|
De La, L. Olvera, M.
|Abstract:||CdTe:Cu films were grown by pulsed laser deposition on Corning glass slides at a substrate temperature of 300�C. The thin films were grown using CdTe and Cu2Te powders, varying the Cu2Te concentration from 3 to 10wt. %. The structural, compositional, optical, and electrical properties were analyzed as a function of the nominal copper concentration. X-ray diffraction shows that films have CdTe cubic phase. The compositional analysis indicates that CdTe:Cu films grown with lower Cu content have Te excess, on the other hand, films with higher Cu content have Te deficiencies. The electrical measurements showed that CdTe:Cu films grown with low Cu content present lowest resistivity. � 2012 American Institute of Physics.|
|Appears in Collections:||Producción científica UdeG|
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