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Title: Physical properties of CdTe:Cu films grown at low temperature by pulsed laser deposition
Author: De Moure-Flores, F.
Quinones-Galvan, J.G.
Guillen-Cervantes, A.
Arias-Ceron, J.S.
Contreras-Puente, G.
Hernandez-Hernandez, A.
Santoyo-Salazar, J.
De La, L. Olvera, M.
Santana-Aranda, M.A.
Zapata-Torres, M.
Mendoza-Alvarez, J.G.
Melendez-Lira, M.
Issue Date: 2012
Abstract: CdTe:Cu films were grown by pulsed laser deposition on Corning glass slides at a substrate temperature of 300�C. The thin films were grown using CdTe and Cu2Te powders, varying the Cu2Te concentration from 3 to 10wt. %. The structural, compositional, optical, and electrical properties were analyzed as a function of the nominal copper concentration. X-ray diffraction shows that films have CdTe cubic phase. The compositional analysis indicates that CdTe:Cu films grown with lower Cu content have Te excess, on the other hand, films with higher Cu content have Te deficiencies. The electrical measurements showed that CdTe:Cu films grown with low Cu content present lowest resistivity. � 2012 American Institute of Physics.
Appears in Collections:Producción científica UdeG

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