Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.12104/42234
Title: Influence of plasma density on the chemical composition and structural properties of pulsed laser deposited TiAlN thin films
Author: Quinones-Galvan, J.G.
Camps, E.
Muhl, S.
Flores, M.
Campos-Gonzalez, E.
Issue Date: 2014
Abstract: Incorporation of substitutional Al into the TiN lattice of the ternary alloy TiAlN results in a material with improved properties compared to TiN. In this work, TiAlN thin films were grown by the simultaneous ablation of Ti and Al targets in a nitrogen containing reactive atmosphere. The deposit was formed on silicon substrates at low deposition temperature (200 �C). The dependence of the Al content of the films was studied as a function of the ion density of the plasma produced by the laser ablation of the Al target. The plasma parameters were measured by means of a planar Langmuir probe and optical emission spectroscopy. The chemical composition of the films was measured by energy dispersive X-ray spectroscopy. The results showed a strong dependence of the amount of aluminum incorporated in the films with the plasma density. The structural characterization of the deposits was carried out by Raman spectroscopy, X-ray diffraction, and transmission electron microscopy, where the substitutional incorporation of the Al into the TiN was demonstrated. � 2014 AIP Publishing LLC.
URI: http://www.scopus.com/inward/record.url?eid=2-s2.0-84901376778&partnerID=40&md5=a7e69735011a52ca4d14075f6c0a1be8
http://hdl.handle.net/20.500.12104/42234
Appears in Collections:Producción científica UdeG

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