Please use this identifier to cite or link to this item:
|Title:||N-methylpyrrolidine-based precursors for chemical vapor deposition of GaNx particles|
|Abstract:||An attempt to prepare a metalorganic precursor of gallium with reactivity at low temperature in chemical vapor deposition (CVD) systems was done by reacting N-methylpyrrolidine with metal gallium or gallium nitrate under mild conditions. The precursors were bubbled into a CVD assemblage and then reacted with ammonia at temperatures between 400 and 700 °C. The depositions onto silicon substrates were pyramidal particles of 100 nm width at the base and up to 55 nm in height. The rise in growth temperature increased particle density from 0.9 to 27.1 particles per square micron, but reduced the height from 50 to 10 or 2 nm. XPS spectra showed the presence of gallium and nitrogen. The intensity of the gallium spectrum decreased as the process temperature increased indicating that GaNx particles were deposited rather than the stoichiometric gallium nitride (GaN). An additional N1s band of impurities appeared whose intensity increases with the reaction temperature. The lower impurity content corresponded to the sample prepared with Ga(NO 3)3 at 400 °C. © 2011 Elsevier Ltd. All rights reserved.|
|Appears in Collections:||Producción científica UdeG (prueba)|
Files in This Item:
There are no files associated with this item.
Items in RIUdeG are protected by copyright, with all rights reserved, unless otherwise indicated.